ePrints

The Newcastle University research output collection, currently available on ePrints, will shortly be moving to a new open repository platform, Figshare. To prepare for the data migration we have paused adding new content to ePrints, and will resume once the new repository is launched. During this time you will continue to have access to ePrints (but no new content will appear). We will share updates here when available.

Browsing publications by Dr Suresh Uppal

Newcastle Authors	Title	Year	Full text
Dr Yuk Tsang Dr Sanatan Chattopadhyay Dr Suresh Uppal Dr Enrique Escobedo-Cousin Deepak Ramakrishnan et al.	Modeling of the threshold voltage in strained Si/Si1-x Gex/S1-yGey(x ≥ y) CMOS architectures	2007
Dr Suresh Uppal	Monte Carlo simulation of Boron implantation into (100) germanium	2007
Dr Suresh Uppal	A study of boron implantation into high Ge content SiGe alloys	2006
Professor Nick Cowern Dr Suresh Uppal	Diffusion and activation of dopants in silicon and advanced silicon-based materials	2006
John Varzgar Dr Mehdi Kanoun Dr Suresh Uppal Dr Sanatan Chattopadhyay Dr Sarah Olsen et al.	Gate Oxide Reliability of Strained Si NMOS Devices Employing a Thin SiFe Strain Relaxed Buffer	2006
John Varzgar Dr Sanatan Chattopadhyay Dr Suresh Uppal Dr Sarah Olsen Professor Anthony O'Neill	Gate oxide reliability of strained Si NMOS devices employing a thin SiGe strain-relaxed buffer	2006
Dr Suresh Uppal John Varzgar Dr Sanatan Chattopadhyay Dr Sarah Olsen Professor Anthony O'Neill	Gate oxide reliability of strained Si/SiGe MOS: effect of Ge content variation	2006
Dr Suresh Uppal John Varzgar Dr Mehdi Kanoun Dr Sanatan Chattopadhyay Dr Sarah Olsen et al.	Gate Oxide Reliability on strained Si/SiGe MOS: Effect of Ge content variation	2006
Dr Suresh Uppal Dr Mehdi Kanoun Dr Sanatan Chattopadhyay Rimoon Agaiby Dr Sarah Olsen et al.	Ge out-diffusion and its effect on electrical properties in s-Si/SiGe devices	2006
Dr Suresh Uppal Dr Mehdi Kanoun Dr Sanatan Chattopadhyay Rouzet Agaiby Dr Sarah Olsen et al.	Ge out-diffusion and its effect on electrical properties in s-Si/SiGe devices	2006
Dr Suresh Uppal Dr Mehdi Kanoun John Varzgar Dr Sanatan Chattopadhyay Dr Sarah Olsen et al.	Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices	2006
Dr Suresh Uppal Dr Mehdi Kanoun John Varzgar Dr Sanatan Chattopadhyay Dr Sarah Olsen et al.	Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices	2006
John Varzgar Dr Mehdi Kanoun Dr Suresh Uppal Dr Sanatan Chattopadhyay Dr Yuk Tsang et al.	Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures	2006
John Varzgar Dr Mehdi Kanoun Dr Suresh Uppal Dr Sanatan Chattopadhyay Dr Yuk Tsang et al.	Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures	2006
Dr Suresh Uppal	An electrically driven mid-infrared solid-state modulator	2005
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