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Diffusion in sige: Defect injection studies in Sb, as and B

Lookup NU author(s): Dr Suresh Uppal, Dr Jun Zhang

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Abstract

The accurate process modeling of impurity diffusion in SiGe relies on correct diffusivity data and understanding of the diffusion mechanisms. In this work, we demonstrate the use of an RTA defect injection technique to elucidate the diffusion mechanisms of Sb, As and B in SiGe, and measure inert diffusivities for 10% Ge. In addition, the technique is used to study the suppression of B diffusion by addition of C to Si and SiGe. Diffusivity is found to be enhanced in 10% SiGe compared to Si for Sb and As, while the diffusion of B is retarded. The addition of C further reduces B diffusion. Diffusion of Sb in SiGe is confirmed to be primarily vacancy mediated, but with f v(SiGe) less than or equal fv(Si). Diffusion of B in SiGe is confirmed to be primarily interstitial mediated. By contrast, diffusion of As in Si and SiGe is demonstrated to be mediated by both interstitials and vacancies.

Publication metadata

Author(s): Bonar JM, Karunaratne MSA, Uppal S, Zhang J, Ashburn P, Willoughby AFW

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Electrochemical Society Proceedings: Proceedings of the First Symposium on SiGe: Materials, Processing, and Devices

Year of Conference: 2004

Pages: 903-914

ISSN: 0161-6374

Publisher: Electrochemical Society, Inc.

Library holdings: Search Newcastle University Library for this item

ISBN: 10569480

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