Optimisation of a power 4H-SiC SIT device for RF heating applications

Ortolland, S; Johnson, CM; Wright, NG; Morrison, DJ; O'Neill, AG

doi:10.1016/S0921-5107(98)00544-3

Optimisation of a power 4H-SiC SIT device for RF heating applications

Lookup NU author(s): Dr Sylvie Ortolland, Dr Christopher Johnson, Professor Nick Wright ORCiD, Dominique Morrison, Professor Anthony O'Neill

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Abstract

In this paper, the optimisation procedure for a static induction transistor (SIT) in silicon carbide is described and its application in a typical RF heating circuit is presented. A field plate edge termination is optimised for a 10 mu m thick epitaxial layer with doping in the range 10(15) cm(-3) to 10(16) cm(-3). Results show a breakdown voltage of 1280 V, corresponding to 68% of the theoretical value. For the chosen application an epitaxial layer doping level of 5 x 10(15) cm(-3) is revealed to offer the best compromise. This allows pinch off of drain voltages exceeding 600 V from a 20 V gate drive whilst achieving a current density of 250 A cm(-2) at an on-state voltage of less than 1 V. Transient simulations are performed for a series load resonant converter with a switching frequency of 27.12 MHz. The results emphasise the suitability of the device for RF heating applications. (C) 1999 Elsevier Science S.A. All rights reserved.