High temperature characterisation of 4H-SiC VJFET

Bhatnagar, P; Wright, NG; Horsfall, AB; Vassilevski, K; Johnson, CM; Uren, MJ; Hilton, KP; Munday, AG; Hydes, AJ

doi:10.4028/www.scientific.net/MSF.556-557.799

High temperature characterisation of 4H-SiC VJFET

Lookup NU author(s): Praneet Bhatnagar, Professor Nick Wright ORCiD, Dr Alton Horsfall, Dr Konstantin Vasilevskiy ORCiD, Dr Christopher Johnson

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Abstract

4H-SiC depletion mode (normally-on) VJFETs were fabricated and characterised at temperatures up to 377 °C. The device current density at drain voltage of 50 V drops down from 54 A/cm2 at room temperature to around 42 A/cm2 at 377 °C which is a 20 % reduction in drain current density. This drop in drain currents is much lower than previously reported values of a 30 % drop in JFETs at high temperatures. The average temperature coefficient of the threshold voltage was found to be -1.36 mV/°C which is smaller than for most Si FETs. We have found that these devices have shown good I-V characteristics upto 377 °C along with being able to retain its characteristics on being retested at room temperature.