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Strained silicon technology

Lookup NU author(s): Professor Anthony O'Neill, Dr Sarah OlsenORCiD, Dr Enrique Escobedo-Cousin, John Varzgar, Rouzet Agaiby, Dr Sanatan Chattopadhyay, Dr Piotr Dobrosz, Professor Steve BullORCiD

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Abstract

Following a brief review of strained silicon technology options, this paper presents results and analysis of strained Si n-channel MOSFETs fabricated on thin SiGe virtual substrates. Significant improvements in electrical performance are demonstrated compared with Si control devices. The impact of SiGe device self-heating is compared for strained Si MOSFETs fabricated on thin and thick virtual substrates. The work demonstrates that by using high quality thin virtual substrates the compromised performance enhancements commonly observed in short gate length MOSFETs and high bias conditions due to self-heating in conventional thick virtual substrate devices are eradicated. © 2006 IEEE.

Publication metadata

Author(s): O'Neill AG, Olsen SH, Escobedo-Cousin E, Varzgar JB, Agaiby R, Chattopadhyay S, Dobrosz P, Bull S, Hellstrom P-E, Ostling M, Lyutovich K, Kasper E

Editor(s): Ting-Ao Tang; Guo-Ping Ru; Yu-Long Jiang

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Year of Conference: 2006

Pages: 104-107

Publisher: IEEE Press

URL: http://dx.doi.org/10.1109/ICSICT.2006.306089

DOI: 10.1109/ICSICT.2006.306089

Library holdings: Search Newcastle University Library for this item

ISBN: 9781424401611

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