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Impact of strain on the design of low-power high-speed circuits

Lookup NU author(s): Dr Sanatan Chattopadhyay, Professor Alex YakovlevORCiD

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Abstract

In this article, we explore the impact of strain on circuit performance when strained silicon (s-Si) devices are used for designing low-power high-speed circuits. Emphasis has been given on the evaluation of noise characteristics and low-power performance along with the delay characteristics under different channel straining conditions. An inverter circuit has been used for performance evaluation through simulation where the device simulator is calibrated with experimental device data. The result shows a great promise for s-Si technology in digital applications which require high throughput and low power. © 2007 IEEE.

Publication metadata

Author(s): Ramakrishnan H, Maharatna K, Chattopadhyay S, Yakovlev A

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: IEEE International Symposium on Circuits and Systems

Year of Conference: 2007

Pages: 1153-1156

Date deposited: 26/05/2010

Publisher: Institute of Electrical and Electronics Engineers

URL: http://dx.doi.org/10.1109/ISCAS.2007.378254

DOI: 10.1109/ISCAS.2007.378254

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