Toggle Main Menu Toggle Search

Open Access padlockePrints

The Newcastle University research output collection, currently available on ePrints, will shortly be moving to a new open repository platform, Figshare. To prepare for the data migration we have paused adding new content to ePrints, and will resume once the new repository is launched. During this time you will continue to have access to ePrints (but no new content will appear). We will share updates here when available.

Transition-metal and hydrogen in ZnO: A source of shallow donors

Lookup NU author(s): Michael Wardle, Professor Jon GossORCiD, Professor Patrick Briddon

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.

Abstract

The structural and electrical properties of Fe, Co, Ni and Cu in ZnO, and their complexes with hydrogen have been studied using local-density-functional methods. Out of the many defect structures examined several centres are of particular relevance to the issue of n-type conductivity in as-grown material. CuZn-H2 is bound by 0.9 eV and exhibits a shallow donor level. FeZn, Coi and Fei also exhibit donor levels which may be shallow. Such centres are much more thermally stable than isolated hydrogen which is thought to be mobile at low temperatures. Combinations of transitional metal and hydrogen might explain at least part of the n-type conductivity seen at room temperature in as-grown ZnO. © 2006 Elsevier B.V. All rights reserved.

Publication metadata

Author(s): Wardle MG, Goss JP, Briddon PR

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 23rd International Conference on Defects in Semiconductors

Year of Conference: 2006

Pages: 731-734

ISSN: 1873-2135

Publisher: Elsevier BV

URL: http://dx.doi.org/10.1016/j.physb.2005.12.183

DOI: 10.1016/j.physb.2005.12.183

Series Title: Physica B: Condensed Matter

Share