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Determination of the interface properties of Ni-silicided strained-Si/SiGe heterostructure Schottky diodes using capacitance-voltage technique

Lookup NU author(s): Arup Saha, Dr Sanatan Chattopadhyay

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Abstract

Capacitance-voltage (C-V) profiling has been used to study the interface properties and apparent doping profile of NiSi/strained-Si heterostructure Schottky diodes. The interface states have been characterized using the capacitance-voltage (C-V) and capacitance-frequency (C-f) techniques for diodes annealed at 400 and 600 °C. Based on the depletion approximation and interfacial layer with interface states, an equivalent circuit model has been developed to explain the anomalous C-V characteristics observed in case of silicided-Schottky diodes. Self-consistent analytical expressions, developed from the proposed equivalent circuit, have been used to simulate the experimental C-V characteristics using both the MATHCAD and SEMICAD device simulation tool. An excellent agreement has been obtained between the experimental and simulated C-V characteristics, which strongly support the validity of the proposed model. © 2006 Elsevier Ltd. All rights reserved.

Publication metadata

Author(s): Saha AR, Chattopadhyay S, Das R, Bose C, Maiti CK

Publication type: Article

Publication status: Published

Journal: Solid-State Electronics

Year: 2006

Volume: 50

Issue: 7-8

Pages: 1269-1275

ISSN (print): 0038-1101

ISSN (electronic): 1879-2405

Publisher: Pergamon

URL: http://dx.doi.org/10.1016/j.sse.2006.06.001

DOI: 10.1016/j.sse.2006.06.001

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