Toggle Main Menu Toggle Search

Open Access padlockePrints

The Newcastle University research output collection, currently available on ePrints, will shortly be moving to a new open repository platform, Figshare. To prepare for the data migration we have paused adding new content to ePrints, and will resume once the new repository is launched. During this time you will continue to have access to ePrints (but no new content will appear). We will share updates here when available.

An investigation of electrical and structural properties of Ni-germanosilicided Schottky diode

Lookup NU author(s): Arup Saha, Dr Sanatan Chattopadhyay, Goutan Dalapati

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.

Abstract

Ni-germanosilicided Schottky barrier diode has been fabricated by annealing the deposited Ni film on strained-Si and characterized electrically in the temperature range of 125 K-300 K. The chemical phases and morphology of the germanosilicided films were studied by using scanning electron microscopy (SEM), cross-sectional transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS). The Schottky barrier height (φb), ideality factor (n) and interface state density (Dit) have been determined from the current-voltage (I-V) and capacitance-voltage (C-V) characteristics. The current-voltage characteristics have also been simulated using SEMICAD device simulator to model the Schottky junction. An interfacial layer and a series resistance were included in the diode model to achieve a better agreement with the experimental data. It has been found that the barrier height values extracted from the I-V and C-V characteristics are different, indicating the existence of an in-homogeneous Schottky interface. Results are also compared with bulk-Si Schottky diode processed in the same run. The variation of electrical properties between the strained- and bulk-Si Schottky diodes has been attributed to the presence of out-diffused Ge at the interface. © 2004 Elsevier Ltd. All rights reserved.

Publication metadata

Author(s): Saha AR, Chattopadhyay S, Dalapati GK, Nandi SK, Maiti CK

Publication type: Article

Publication status: Published

Journal: Microelectronics Reliability

Year: 2005

Volume: 45

Issue: 7-8

Pages: 1154-1160

ISSN (print): 0026-2714

ISSN (electronic): 1872-941X

Publisher: Pergamon

URL: http://dx.doi.org/10.1016/j.microrel.2004.08.012

DOI: 10.1016/j.microrel.2004.08.012

Altmetrics

Altmetrics provided by Altmetric

Share