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Optical and electrical properties of vanadium and erbium in 4H-SiC

Lookup NU author(s): Dr Michael Shaw, Professor Patrick Briddon

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Abstract

Local-density-functional calculations are carried out on vanadium and erbium centers in 4H-SiC. Particular attention is paid to their electrical and optical properties. We find that both V and Er lie at yySi sites and can exist in three charge states with deep donor and acceptor levels. While isolated VSi possesses intra-d and ionization induced optical transitions around 0.94 and 2.9 eV respectively, the intense and temperature stable intra-f optical transitions due to Er are unlikely to be due to an isolated Er defect. It is suggested that both impurities can trap H and N forming complexes which may limit the electrical efficiency of V and act as Er related exciton traps.

Publication metadata

Author(s): Prezzi D, Eberlein TAG, Filhol J-S, Jones R, Shaw MJ, Briddon PR, Oberg S

Publication type: Article

Publication status: Published

Journal: Physical Review B

Year: 2004

Volume: 69

Issue: 19

ISSN (print): 0163-1829

ISSN (electronic):

Publisher: American Physical Society

URL: http://dx.doi.org/10.1103/PhysRevB.69.193202

DOI: 10.1103/PhysRevB.69.193202

Notes: Article no. 193202 4 pages

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