ePrints

Effect of annealing on interface state density of Ni-silicided/Si _1-xGe_x Schottky diode

Lookup NU author(s): Arup Saha, Dr Sanatan Chattopadhyay, Goutan Dalapati

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.

Abstract

Nickel-silicided/Si_1-xGe_x Schottky junctions are fabricated by annealing the deposited nickel (Ni) film on relaxed Si _0.75Ge_0.25 layer at a temperature range of 300-900degreesC for 60s. Energy dispersive spectroscopy (EDS) was used to quantify the Ge composition in silicide/germanosilicide grains, formed during annealing. Schottky barrier height (Phi_B) of the silicided diodes was extracted from forward current-voltage (I-V) and capacitance-voltage (C-V) characteristics. The forward I-V characteristics were also simulated for understanding the influence of interfacial layer present at the silicide and Si_0.75Ge_0.25 interface. The capacitance-voltage method was used to determine the energy distribution of the interface state density (D_it) and was found to decrease with increasing energy from the valence band edge. [All rights reserved Elsevier] (16 References).

Publication metadata

Author(s): Saha AR, Chattopadhyay S, Dalapati GK, Bose C, Maiti CK

Publication type: Article

Publication status: Published

Journal: Materials Science in Semiconductor Processing

Year: 2005

Volume: 8

Issue: 1-3

Pages: 249-253

ISSN (print): 1369-8001

ISSN (electronic): 1873-4081

Publisher: Pergamon

URL: http://dx.doi.org/10.1016/j.mssp.2004.09.042

DOI: 10.1016/j.mssp.2004.09.042

Notes: Journal issue: Proceedings of the Second International SiGe Technology and Device Meeting (ISTDM 2004) Kleist-Forum, Frankfurt (Oder), Germany, 16-19 May, 2004

Altmetrics

Share