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The Newcastle University research output collection, currently available on ePrints, will shortly be moving to a new open repository platform, Figshare. To prepare for the data migration we have paused adding new content to ePrints, and will resume once the new repository is launched. During this time you will continue to have access to ePrints (but no new content will appear). We will share updates here when available.

Improved gate oxide integrity of strained Si n-channel metal oxide silicon field effect transistors using thin virtual substrates

Lookup NU author(s): Liang Yan, Dr Sarah OlsenORCiD, Dr Enrique Escobedo-Cousin, Professor Anthony O'Neill

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Publication metadata

Author(s): Yan L, Olsen SH, Escobedo-Cousin E, O'Neill AG

Publication type: Article

Publication status: Published

Journal: Journal of Applied Physics

Year: 2008

Volume: 103

Issue: 9

Print publication date: 01/01/2008

ISSN (print): 0021-8979

ISSN (electronic): 1520-8850

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.2917286

DOI: 10.1063/1.2917286

Notes: Article no. 094508 10 pages


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