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Utilizing Integrated GaN Half Bridges for an Integrated Single-Stage Current Source Inverter Motor Drive

Lookup NU author(s): Nail Tosun, Dr Devinda MolligodaORCiD, Dr Xu DengORCiD, Professor Barrie MecrowORCiD

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This work is licensed under a Creative Commons Attribution 4.0 International License (CC BY 4.0).

Abstract

© 2013 IEEE.Current-source inverters (CSIs) remain an attractive alternative to voltage-source inverters (VSIs) because they can provide inherent voltage boosting for high-speed operation, deliver low-distortion current waveforms, and mitigate motor-side electromagnetic interference. The rapid adoption of GaN and SiC devices further strengthens this value proposition, yet the sub-nH gate-loop inductance demanded by GaN switches can only be satisfied by half-bridge modules with integrated gate drivers. Their deployment in CSI topologies has, however, been constrained by shoot-through susceptibility under conventional modulation. This paper introduces a single-stage CSI motor drive that leverages an integrated GaN half-bridge module and a tailored near-state PWM strategy that removes zero-state vectors. The resulting modulation prevents shoot-through events, thereby enabling the use of integrated half-bridge drivers with CSIs, while simultaneously reducing the dc-link inductance requirement, common mode voltage (CMV), and switching losses. Although the attainable modulation index is currently confined to the range 2/3–1, practical extensions are discussed with reference to near-state VSI implementations. Analytical insights are substantiated through experimental validation on a 100 W, 100 krpm prototype drive, built with GaN half-bridge modules featuring integrated gate drivers.

Publication metadata

Author(s): Tosun N, Molligoda D, Deng X, Mecrow BC

Publication type: Article

Publication status: Published

Journal: IEEE Journal of Emerging and Selected Topics in Power Electronics

Year: 2026

Pages: 1-1

Online publication date: 12/05/2026

Acceptance date: 02/04/2018

Date deposited: 03/07/2026

ISSN (print): 2168-6777

ISSN (electronic): 2168-6785

Publisher: Institute of Electrical and Electronics Engineers Inc.

URL: https://doi.org/10.1109/JESTPE.2026.3692437

DOI: 10.1109/JESTPE.2026.3692437

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