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Insulating SiO2under Centimeter-Scale, Single-Crystal Graphene Enables Electronic-Device Fabrication

Lookup NU author(s): Professor Werner Hofer

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Abstract

© Graphene on SiO2 enables fabrication of Si-technology-compatible devices, but a transfer of these devices from other substrates and direct growth have severe limitations due to a relatively small grain size or device-contamination. Here, we show an efficient, transfer-free way to integrate centimeter-scale, single-crystal graphene, of a quality suitable for electronic devices, on an insulating SiO2 film. Starting with single-crystal graphene grown epitaxially on Ru(0001), a SiO2 film is grown under the graphene by stepwise intercalation of silicon and oxygen. Thin (∼1 nm) crystalline or thicker (∼2 nm) amorphous SiO2 has been produced. The insulating nature of the thick amorphous SiO2 is verified by transport measurements. The device-quality of the corresponding graphene was confirmed by the observation of Shubnikov-de Haas oscillations, an integer quantum Hall effect, and a weak antilocalization effect within in situ fabricated Hall bar devices. This work provides a reliable platform for applications of large-scale, high-quality graphene in electronics.

Publication metadata

Author(s): Guo H, Wang X, Huang L, Jin X, Yang Z, Zhou Z, Hu H, Zhang Y-Y, Lu H, Zhang Q, Shen C, Lin X, Gu L, Dai Q, Bao L, Du S, Hofer W, Pantelides ST, Gao H-J

Publication type: Article

Publication status: Published

Journal: Nano Letters

Year: 2020

Volume: 20

Issue: 12

Pages: 8584-8591

Print publication date: 09/12/2020

Online publication date: 17/11/2020

Acceptance date: 11/11/2020

ISSN (print): 1530-6984

ISSN (electronic): 1530-6992

Publisher: American Chemical Society

URL: https://doi.org/10.1021/acs.nanolett.0c03254

DOI: 10.1021/acs.nanolett.0c03254

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