Toggle Main Menu Toggle Search

Open Access padlockePrints

The Newcastle University research output collection, currently available on ePrints, will shortly be moving to a new open repository platform, Figshare. To prepare for the data migration we have paused adding new content to ePrints, and will resume once the new repository is launched. During this time you will continue to have access to ePrints (but no new content will appear). We will share updates here when available.

Epitaxial synthesis and electronic properties of monolayer Pd2Se3

Lookup NU author(s): Professor Werner Hofer

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.

Abstract

© 2020 Chinese Physical Society and IOP Publishing Ltd.Two-dimensional (2D) materials received large amount of studies because of the enormous potential in basic science and industrial applications. Monolayer Pd2Se3 is a fascinating 2D material that was predicted to possess excellent thermoelectric, electronic, transport, and optical properties. However, the fabrication of large-scale and high-quality monolayer Pd2Se3 is still challenging. Here, we report the synthesis of large-scale and high-quality monolayer Pd2Se3 on graphene-SiC (0001) by a two-step epitaxial growth. The atomic structure of Pd2Se3 was investigated by scanning tunneling microscope (STM) and confirmed by non-contact atomic force microscope (nc-AFM). Two subgroups of Se atoms have been identified by nc-AFM image in agreement with the theoretically predicted atomic structure. Scanning tunneling spectroscopy (STS) reveals a bandgap of 1.2 eV, suggesting that monolayer Pd2Se3 can be a candidate for photoelectronic applications. The atomic structure and defect levels of a single Se vacancy were also investigated. The spatial distribution of STS near the Se vacancy reveals a highly anisotropic electronic behavior. The two-step epitaxial synthesis and characterization of Pd2Se3 provide a promising platform for future investigations and applications.

Publication metadata

Author(s): Fan P, Zhang R-Z, Qi J, Li E, Qian G-J, Chen H, Wang D-F, Zheng Q, Wang Q, Lin X, Zhang Y-Y, Du S, Hofer WA, Gao H-J

Publication type: Article

Publication status: Published

Journal: Chinese Physics B

Year: 2020

Volume: 29

Issue: 9

Print publication date: 01/08/2020

Acceptance date: 02/04/2018

ISSN (print): 1674-1056

ISSN (electronic): 2058-3834

Publisher: IOP Publishing Ltd

URL: https://doi.org/10.1088/1674-1056/abab80

DOI: 10.1088/1674-1056/abab80

Altmetrics

Altmetrics provided by Altmetric

Share