High Mobility 4H-SiC MOSFET

Orneill, A; Arith, F; Urresti, J; Vasilevskiy, K; Wright, N; Olsen, S

doi:10.1109/ICSICT.2018.8564911

High Mobility 4H-SiC MOSFET

Lookup NU author(s): Professor Anthony O'Neill, Faiz Arith, Dr Jesus Urresti Ibanez ORCiD, Dr Konstantin Vasilevskiy ORCiD, Professor Nick Wright ORCiD, Dr Sarah Olsen ORCiD

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Abstract

© 2018 IEEE. Enhancement mode 4H-SiC MOSFETs with a channel length of 2 μm achieved a room temperature field effect mobility of 125 cm2/V•s and a subthreshold slope of 130 mV/dec. The temperature dependence of mobility up to 300 °C indicates that phonon scattering has replaced Coulombic scattering in these devices, which remain enhancement mode with high mobility and an ON/OFF current ratio in excess of 106. The fabricated devices utilised a gate stack comprising a 0.7 nm thin thermal SiO2, thereby reducing defects following oxidation, and a 40 nm thick Al2O3 formed by atomic layer deposition.