High mobility 4H-SiC MOSFET using a thin SiO2/Al2O3 gate stack

Arith, F; Urresti, J; Vasilevskiy, K; Olsen, S; Wright, N; O'Neill, A

doi:10.1109/ESSDERC.2018.8486896

High mobility 4H-SiC MOSFET using a thin SiO₂/Al₂O₃ gate stack

Lookup NU author(s): Faiz Arith, Dr Jesus Urresti Ibanez ORCiD, Dr Konstantin Vasilevskiy ORCiD, Dr Sarah Olsen ORCiD, Professor Nick Wright ORCiD, Professor Anthony O'Neill

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Abstract

© 2018 IEEE. Enhancement mode 4H-SiC MOSFETs with a channel length of 2 μm achieved a room temperature field effect mobility of 125 cm2/V·s and a subthreshold slope of 130 mY/dec. The devices demonstrated a remarkable temperature stability up to 300°C, remaining enhancement mode with high mobility and an ON/OFF current ratio in excess of 106. The fabricated devices utilised a gate stack comprising a 0.7 nm thin thermal SiO2, thereby reducing defects following oxidation, and a 40 nm thick Ah03 formed by atomic layer deposition. A high mobility was maintained over a wide gate voltage range.