First demonstration of high temperature SiC CMOS gate driver in bridge leg for hybrid power module application

Weng, MH; Idris, MI; Wright, S; Clark, DT; Young, RAR; McIntosh, JR; Gordon, DL; Horsfall, AB

doi:10.4028/www.scientific.net/MSF.924.854

First demonstration of high temperature SiC CMOS gate driver in bridge leg for hybrid power module application

Lookup NU author(s): Dr Ming-Hung Weng, Idzdihar Idris, Dr Alton Horsfall

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Abstract

© 2018 Trans Tech Publications, Switzerland. A high temperature silicon carbide power module using CMOS gate drive technology and discrete power devices is presented. The power module was aged at 200V and 300˚C for 3,000 hours in a long-term reliability test. After the initial increase, the variation in the rise time of the module is 27% (49.63ns@1,000h compared to 63.1ns@3,000h), whilst the fall time increases by 54.3% (62.92ns@1,000h compared to 97.1ns@3,000h). The unique assembly enables the integration circuits of CMOS logic with passive circuit elements capable of operation at temperatures of 300ºC and beyond.