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Comment on "Diffusion of n-type dopants in germanium" [Appl. Phys. Rev. 1, 011301 (2014)]

Lookup NU author(s): Professor Nick Cowern, Dr Sergei Simdyankin, Professor Jon GossORCiD, Dr Chihak Ahn, Dr Nick Bennett

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Abstract

The authors of the above paper call into question recent evidence on the properties of self-interstitials, I, in Ge [Phys. Rev. Lett. 110, 155501 (2013)]. We show that this judgment stems from invalid model assumptions during analysis of data on B marker-layer diffusion during proton irradiation, and that a corrected analysis fully supports the reported evidence. As previously stated, I-mediated self-diffusion in Ge exhibits two distinct regimes of temperature, T: high-T, dominated by amorphous-like mono-interstitial clusters – i-morphs – with self-diffusion entropy ≈ 30 k, and low-T, where transport is dominated by simple self-interstitials. In a transitional range centered on 475°C both mechanisms contribute. The experimental I migration energy of (1.84 ± 0.26) eV reported by the Münster group based on measurements of self-diffusion during irradiation at 550°C < T < 680°C further establishes our proposed i-morph mechanism.

Publication metadata

Author(s): Cowern NEB, Simdyankin S, Goss JP, Napolitani E, DeSalvador D, Bruno E, Mirabella S, Ahn C, Bennett NS

Publication type: Article

Publication status: Published

Journal: Applied Physics Reviews

Year: 2015

Volume: 2

Online publication date: 02/09/2015

Acceptance date: 26/06/2015

Date deposited: 01/07/2015

ISSN (electronic): 1931-9401

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.4929762

DOI: 10.1063/1.4929762

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