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Time and Frequency Domain Characterization of Transistor Self-Heating

Lookup NU author(s): Sergej Makovejev, Dr Sarah OlsenORCiD, Professor Jean-Pierre Raskin

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Abstract

Pulsed I-V and AC conductance or RF characterization techniques, within the time and the frequency domain, respectively, represent two approaches for evaluating self-heating in MOSFETs. In this paper, these methods are compared. Advantages and limitations of each technique are discussed and experimentally verified in silicon-on-insulator (SOI) MOSFETs. It is demonstrated that RF technique and the pulsed I-V hot chuck method agree well for the studied 130-nm-node partially depleted SOI devices. Applicability of the techniques for advanced technologies is discussed.

Publication metadata

Author(s): Makovejev S, Olsen SH, Kilchytska V, Raskin JP

Publication type: Article

Publication status: Published

Journal: IEEE Transactions on Electron Devices

Year: 2013

Volume: 60

Issue: 6

Pages: 1844-1851

Print publication date: 01/06/2013

ISSN (print): 0018-9383

ISSN (electronic): 1557-9646

Publisher: IEEE

URL: http://dx.doi.org/10.1109/TED.2013.2259174

DOI: 10.1109/TED.2013.2259174

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