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Experimental observations of surface roughness in uniaxially loaded strained Si microelectromechanical systems-based structures

Lookup NU author(s): Dr Enrique Escobedo-Cousin, Dr Sarah OlsenORCiD, Professor Jean-Pierre Raskin

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This is the final published version of an article that has been published in its final definitive form by American Institute of Physics, 2011.

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Abstract

Surface roughness in uniaxially loaded strained Si has been studied experimentally using high-resolution atomic force microscopy and a microelectromechanical systems-based on-chip loading device. A reduction in rms roughness from 0.29 nm to 0.07 nm has been identified as strain increases from 0 to 2.8% (stress from 0 to 4.9 GPa). The correlation length of the roughness, also known to affect carrier mobility, increases with increasing strain up to 1.7% before reducing at larger levels of strain. These results partly explain the high-field mobility observed in strained Si, indicating that a modified correlation length should also be considered in transport modelling of strained Si. (C) 2011 American Institute of Physics. [doi:10.1063/1.3669413]

Publication metadata

Author(s): Escobedo-Cousin E, Olsen SH, Pardoen T, Bhaskar U, Raskin JP

Publication type: Article

Publication status: Published

Journal: Applied Physics Letters

Year: 2011

Volume: 99

Issue: 24

Print publication date: 14/12/2011

Date deposited: 01/07/2013

ISSN (print): 0003-6951

ISSN (electronic): 1077-3118

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.3669413

DOI: 10.1063/1.3669413

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