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6 kV, 10.5 mOhm·cm2 nickel silicide Schottky diodes on commercial 4H-SiC epitaxial wafers

Lookup NU author(s): Dr Konstantin VasilevskiyORCiD, Irina Nikitina, Dr Alton Horsfall, Professor Nick WrightORCiD, Dr Christopher Johnson

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Abstract

4H-SiC diodes with 0.60 mm2 nickel silicide Schottky contacts were fabricated on commercial epitaxial layers. At room temperature, the diodes have specific on-resistances (RON-SP) down to 10.5 mΩ×cm2 and blocking voltages (VBL) up to 4.6 kV, which is equal to 93 % of the calculated parallel plane breakdown voltage for used epitaxial structure. The corresponding figureof- merit, defined as (VBL)2/RON-SP, is equal to 2015 MW/cm 2 and is among the highest FOM values reported to date. The diodes demonstrated stable operation at forward current of 1 A and VBL value in excess of 3.3 kV at ambient temperatures up to 200°C. © (2010) Trans Tech Publications, Switzerland.

Publication metadata

Author(s): Vassilevski K, Nikitina I, Horsfall A, Wright N, Johnson C

Editor(s): Bauer, A.J., Friedrichs, P., Krieger, M., Pensl, G., Rupp, R., Seyller, T.

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Materials Science Forum: Silicon Carbide and Related Materials

Year of Conference: 2010

Pages: 897-900

Publisher: Trans Tech Publications Ltd.

URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.645-648.897

DOI: 10.4028/www.scientific.net/MSF.645-648.897

Library holdings: Search Newcastle University Library for this item

ISBN: 0878492798

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