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Free standing AlN single crystal grown on pre-patterned and in situ patterned 4H-SiC substrates

Lookup NU author(s): Dr Konstantin VasilevskiyORCiD, Irina Nikitina, Professor Nick WrightORCiD

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Abstract

Free standing AlN wafers were grown on pre-patterned and in situ patterned 4H-SiC substrates by a physical vapor transport method. It is based on the coalescence of AlN microrods, which evolve from the apex of SiC pyramids grown on the SiC substrate during a temperature ramp up for in situ patterned substrate and SiC pyramids formed by reactive ion etching (RIE). This process yields stress-free (according XRD and Raman results) AlN single crystals with a thickness up to 400 μm and low dislocation density. © (2010) Trans Tech Publications.

Publication metadata

Author(s): Yazdi G, Vassilevski K, Córdoba J, Gogova D, Nikitina I, Syväjärvi M, Odén M, Wright N, Yakimova R

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Materials Science Forum: Silicon Carbide and Related Materials 2009

Year of Conference: 2010

Pages: 1187-1190

ISSN: 0255-5476

Publisher: Trans Tech Publications Ltd.

URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.645-648.1187

DOI: 10.4028/www.scientific.net/MSF.645-648.1187

Library holdings: Search Newcastle University Library for this item

ISBN: 0878492798

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