Toggle Main Menu Toggle Search

Open Access padlockePrints

The Newcastle University research output collection, currently available on ePrints, will shortly be moving to a new open repository platform, Figshare. To prepare for the data migration we have paused adding new content to ePrints, and will resume once the new repository is launched. During this time you will continue to have access to ePrints (but no new content will appear). We will share updates here when available.

Transfer of Physically-Based Models from Process to Device Simulations: Application to Advanced Strained Si/SiGe MOSFETs

Lookup NU author(s): Professor Nick Cowern, Dr Nick Bennett, Dr Chihak Ahn, Dr Joo Chul Yoon

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.

Abstract

Integrated process and device simulations were used to predict sub-45nm Strained-Si/Si0.8Ge0.2 device performance. Physically-based process models, generalized from Si to strained-Si and SiGe, describe dopant implantation and diffusion, including amorphization, defect interactions and evolution, as well as dopant-defect interactions. The models are used within a unique simulation tool to reproduce the electrical characteristics of Si/SiGe devices.

Publication metadata

Author(s): Bazizi EM, Fazzini PF, Cristiano F, Pakfar A, Tavernier C, Payet F, Skotnicki T, Zechner C, Zographos N, Matveev D, Cowern NEB, Bennett N, Ahn C, Yoon JC

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: International Electron Device Meeting

Year of Conference: 2010

Pages: 15.1.1-15.1.4

ISSN: 0163-1918

Publisher: IEEE

URL: http://dx.doi.org/10.1109/IEDM.2010.5703365

DOI: 10.1109/IEDM.2010.5703365

Notes: Online ISBN: 9781424474196

Library holdings: Search Newcastle University Library for this item

ISBN: 9781442474185

Share