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The Newcastle University research output collection, currently available on ePrints, will shortly be moving to a new open repository platform, Figshare. To prepare for the data migration we have paused adding new content to ePrints, and will resume once the new repository is launched. During this time you will continue to have access to ePrints (but no new content will appear). We will share updates here when available.

Analysis of Gate Leakage in Strained Si MOSFETs

Lookup NU author(s): Liang Yan, Dr Sarah OlsenORCiD, Dr Mehdi Kanoun, Rimoon Agaiby, Goutan Dalapati, Professor Anthony O'Neill

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Publication metadata

Author(s): Yan L, Olsen SH, Kanoun M, AlAraimi M, Agaiby R, Dalapati GK, ONeill AG

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting

Year of Conference: 2006

Pages: 1001-1012

ISSN: 1938-5862

Publisher: The Electrochemical Society

URL: http://dx.doi.org/10.1149/1.2355894

DOI: 10.1149/1.2355894

Library holdings: Search Newcastle University Library for this item

ISBN: 19386737


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