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The Newcastle University research output collection, currently available on ePrints, will shortly be moving to a new open repository platform, Figshare. To prepare for the data migration we have paused adding new content to ePrints, and will resume once the new repository is launched. During this time you will continue to have access to ePrints (but no new content will appear). We will share updates here when available.

Linearity and mobility degradation in strained Si MOSFETs with thin gate dielectrics

Lookup NU author(s): Layi Alatise, Dr Sarah OlsenORCiD, Professor Anthony O'Neill

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Publication metadata

Author(s): Alatise OM, Olsen SH, O'Neill AG

Publication type: Article

Publication status: Published

Journal: Solid State Electronics

Year: 2010

Volume: 54

Issue: 6

Pages: 628-634

Print publication date: 25/01/2010

ISSN (print): 0038-1101

ISSN (electronic): 1879-2405

Publisher: Pergamon

URL: http://dx.doi.org/10.1016/j.sse.2009.12.036

DOI: 10.1016/j.sse.2009.12.036


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