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Investigation of oxidation-induced strain in a top-down Si nanowire platform

Lookup NU author(s): Dr Piotr Dobrosz, Dr Sarah OlsenORCiD

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Abstract

In this paper, we investigate the effect of different process parameters on oxidation-induced strain (OIS) into a doubly-clamped silicon nanowire FET to control and finally, enhance carrier mobility. Spacer technology together with sacrificial thermal oxidation were used to fabricate approximate to 100 nm wide Si NWs. The built-in tensile stress in the Si NWs was measured using micro-Raman spectroscopy and a maximum of 2.6 GPa was found. (C) 2009 Elsevier B.V. All rights reserved.

Publication metadata

Author(s): Najmzadeh M, Bouvet D, Dobrosz P, Olsen S, Ionescu AM

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Microelectronic Engineering: INFOS

Year of Conference: 2009

Pages: 1961-1964

Online publication date: 18/03/2009

ISSN: 0167-9317

Publisher: Elsevier

URL: http://dx.doi.org/10.1016/j.mee.2009.03.086

DOI: 10.1016/j.mee.2009.03.086

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